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FCH47N60F

FCH47N60F

FCH47N60F

ON Semiconductor

FCH47N60F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FCH47N60F Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series SuperFET™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Base Part Number FCH47N60
Power Dissipation-Max 417W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 73m Ω @ 23.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
FCH47N60F Product Details

FCH47N60F Description

SUPERFIT MOSFET is ON Semiconductor?ˉs first generation of high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This technology is tailored to minimize conduction loss and provide superior switching performance,dv/dt rate, and higher avalanche energy. Consequently, SUPERFIT MOSFET is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. SUPERFIT FRFET MOSFET?ˉs optimized body diode reverse recovery performance can remove additional components and improve system reliability.



FCH47N60F Features 

650 V @ TJ = 150??C

Typ. RDS(on) = 58 m

Ultra Low Gate Charge (Typ. Qg = 210 nC)

Low Effective Output Capacitance (Typ. Cosseff. = 420 pF)

100% Avalanche Tested

These Devices are Pb?Free and are RoHS Compliant



FCH47N60F Applications

Solar Inverter

AC?DC Power Supply




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