FCH47N60F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FCH47N60F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Series
SuperFET™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
compliant
Base Part Number
FCH47N60
Power Dissipation-Max
417W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
73m Ω @ 23.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
8000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
47A Tc
Gate Charge (Qg) (Max) @ Vgs
270nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
FCH47N60F Product Details
FCH47N60F Description
SUPERFIT MOSFET is ON Semiconductor?ˉs first generation of high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This technology is tailored to minimize conduction loss and provide superior switching performance,dv/dt rate, and higher avalanche energy. Consequently, SUPERFIT MOSFET is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. SUPERFIT FRFET MOSFET?ˉs optimized body diode reverse recovery performance can remove additional components and improve system reliability.