FQB9P25TM

new-10%

Manufacturer part number:FQB9P25TM

Manufacturer:ON Semiconductor

Description:FQB9P25TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQB9P25TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-250V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	-9.4A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.13W Ta 120W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.13W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	620m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1180pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.4A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	150ns
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	65 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	9.4A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.62Ohm
Drain to Source Breakdown Voltage	-250V
Avalanche Energy Rating (Eas)	650 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free