FCP190N65F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FCP190N65F Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2014
Series
FRFET®, SuperFET® II
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
208W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
190m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds
3225pF @ 25V
Current - Continuous Drain (Id) @ 25°C
20.6A Tc
Gate Charge (Qg) (Max) @ Vgs
78nC @ 10V
Rise Time
11ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
4.2 ns
Turn-Off Delay Time
62 ns
Continuous Drain Current (ID)
20.6A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
650V
Avalanche Energy Rating (Eas)
400 mJ
Height
16.3mm
Length
10.67mm
Width
4.7mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.224840
$4.22484
10
$3.985698
$39.85698
100
$3.760093
$376.0093
500
$3.547257
$1773.6285
1000
$3.346469
$3346.469
FCP190N65F Product Details
FCP190N65F Description
SuperFETJIMOSFET is a new series of high voltage superjunction (SJ) MOSFET products that use charge balance technology to achieve excellent on-resistance and lower gate charge performance. This technology is designed to minimize on-loss and provide excellent switching performance, dv/dt ratings and higher avalanche energy. Therefore, SuperFET IMOSFET is very suitable for switching electric vehicles, such as PFC, server / telecom power supply, flat screen TV power supply, AX power supply and industrial power applications. The reverse recovery performance of SuperFETII FRFETMOSFET optimized volume diode can remove additional components and improve the reliability of the system.