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FCP190N65F

FCP190N65F

FCP190N65F

ON Semiconductor

FCP190N65F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FCP190N65F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series FRFET®, SuperFET® II
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 208W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 3225pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.6A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.2 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 20.6A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 400 mJ
Height 16.3mm
Length 10.67mm
Width 4.7mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.224840 $4.22484
10 $3.985698 $39.85698
100 $3.760093 $376.0093
500 $3.547257 $1773.6285
1000 $3.346469 $3346.469
FCP190N65F Product Details

FCP190N65F    Description


 Super FETJI MOSFET is a new series of high voltage super junction (SJ) MOSFET products that use charge balance technology to achieve excellent on-resistance and lower gate charge performance. This technology is designed to minimize on-loss and provide excellent switching performance, dv/dt ratings and higher avalanche energy. Therefore, SuperFET IMOSFET is very suitable for switching electric vehicles, such as PFC, server / telecom power supply, flat screen TV power supply, AX power supply and industrial power applications. The reverse recovery performance of SuperFETII FRFETMOSFET optimized volume diode can remove additional components and improve the reliability of the system.


FCP190N65F     Features


[email protected]=150 ℃

Typical value RDS (on) = 168m Ω

Ultra-low gate charge (typical value Q=60nC)

Low effective output capacitance (typical value Coss (ef1.) = 186pF),

100% avalanche test

conforming to RoHS standard


FCP190N65F     Application


LCD/LED/PDPTV

solar inverter

AC-DC power supply



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