FCPF850N80Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FCPF850N80Z Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
2.27g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2017
Series
SuperFET® II
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Channels
1
Power Dissipation-Max
28.4W Tc
Element Configuration
Single
Turn On Delay Time
16 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
850m Ω @ 3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 600μA
Input Capacitance (Ciss) (Max) @ Vds
1315pF @ 100V
Current - Continuous Drain (Id) @ 25°C
6A Tc
Gate Charge (Qg) (Max) @ Vgs
29nC @ 10V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
4.5 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
6A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
6A
Drain to Source Breakdown Voltage
800V
Height
16.07mm
Length
10.36mm
Width
4.9mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FCPF850N80Z Product Details
FCPF850N80Z Description
FCPF850N80Z is a type of N-channel SUPERFET II MOSFET that belongs to the brand?new high voltage super?junction (SJ) MOSFET family provided by ON Semiconductor. Based on the charge balance technology, it is able to provide outstanding low on?resistance and lower gate charge performance, minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. Over 2kV HBM surge stress can be withstood based on the internal gate-source ESD diode.