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IRFIBF20GPBF

IRFIBF20GPBF

IRFIBF20GPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 8Ohm @ 720mA, 10V ±20V 490pF @ 25V 38nC @ 10V 900V TO-220-3 Full Pack, Isolated Tab

SOT-23

IRFIBF20GPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Number of Pins 3
Supplier Device Package TO-220-3
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 8Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Power Dissipation 30W
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8Ohm @ 720mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.2A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 21ns
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 1.2A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 490pF
Drain to Source Resistance 8Ohm
Rds On Max 8 Ω
Nominal Vgs 4 V
Height 9.8mm
Length 10.63mm
Width 4.83mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.49000 $3.49
50 $2.83100 $141.55
100 $2.55770 $255.77
500 $2.01144 $1005.72
IRFIBF20GPBF Product Details

IRFIBF20GPBF Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 490pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 56 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 8Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 900V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFIBF20GPBF Features


a continuous drain current (ID) of 1.2A
the turn-off delay time is 56 ns
single MOSFETs transistor is 8Ohm
a threshold voltage of 4V
a 900V drain to source voltage (Vdss)


IRFIBF20GPBF Applications


There are a lot of Vishay Siliconix
IRFIBF20GPBF applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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