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FCPF9N60NT

FCPF9N60NT

FCPF9N60NT

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tube 385m Ω @ 4.5A, 10V ±30V 1240pF @ 100V 29nC @ 10V TO-220-3 Full Pack

SOT-23

FCPF9N60NT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMOS™
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 29.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 29.8W
Case Connection ISOLATED
Turn On Delay Time 12.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 385m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 100V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 8.7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10.2 ns
Turn-Off Delay Time 36.9 ns
Continuous Drain Current (ID) 9A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 27A
Height 15.9mm
Length 10.16mm
Width 4.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.57000 $2.57
10 $2.32200 $23.22
100 $1.86620 $186.62
500 $1.45146 $725.73
FCPF9N60NT Product Details

FCPF9N60NT Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1240pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 9A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.9A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 36.9 ns.Peak drain current for this device is 27A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12.7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

FCPF9N60NT Features


a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 36.9 ns
based on its rated peak drain current 27A.


FCPF9N60NT Applications


There are a lot of ON Semiconductor
FCPF9N60NT applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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