SISS71DN-T1-GE3 Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 31 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1050pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -23A.Peak drain current for this device is 40A, which is its maximum pulsed drain current.-2.5V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SISS71DN-T1-GE3 Features

the avalanche energy rating (Eas) is 31 mJ
a continuous drain current (ID) of -23A
based on its rated peak drain current 40A.
a threshold voltage of -2.5V
a 100V drain to source voltage (Vdss)

SISS71DN-T1-GE3 Applications

There are a lot of Vishay Siliconix
SISS71DN-T1-GE3 applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification