FDB52N20TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDB52N20TM Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 22 hours ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
1.31247g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Series
UniFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
49mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
52A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
357W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
357W
Case Connection
DRAIN
Turn On Delay Time
53 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
49m Ω @ 26A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
52A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Rise Time
160ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
150 ns
Turn-Off Delay Time
48 ns
Continuous Drain Current (ID)
52A
Threshold Voltage
5V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
208A
Avalanche Energy Rating (Eas)
2520 mJ
Max Junction Temperature (Tj)
150°C
Nominal Vgs
5 V
Height
5.08mm
Length
9.98mm
Width
10.16mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$1.45070
$1160.56
1,600
$1.33722
$1.33722
2,400
$1.24992
$2.49984
5,600
$1.20627
$6.03135
FDB52N20TM Product Details
FDB52N20TM Description
UniFETM MOSFET FDB52N20TM is Fairchild Semiconductor's high voltage MOSFET FDB52N20TMseries based on planar stripe and DMOS technology. The MOSFET is tailor-made to reduce on-resistance to provide better switching performance and higher avalanche energy intensity. The device family is suitable for switching power supply converter applications such as power factor correction (PFC), flat panel display (FPD), TV, PowerATX and electronic light bulbs.