FDB52N20TM

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FDB52N20TM

Manufacturer part number:FDB52N20TM

Manufacturer:ON Semiconductor

Description:FDB52N20TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDB52N20TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 22 hours ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	UniFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	49mOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	52A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	357W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	357W
Case Connection	DRAIN
Turn On Delay Time	53 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	49m Ω @ 26A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	52A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Rise Time	160ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	150 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	52A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	208A
Avalanche Energy Rating (Eas)	2520 mJ
Max Junction Temperature (Tj)	150°C
Nominal Vgs	5 V
Height	5.08mm
Length	9.98mm
Width	10.16mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free