FDB8441-F085

new-10%

Manufacturer part number:FDB8441-F085

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 40V 80A D2PAK

Case Package:SOT-23

Datasheet:FDB8441-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	23 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	15000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	28A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	280nC @ 10V
Rise Time	24ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	17.9 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	28A
Drain-source On Resistance-Max	0.0025Ohm
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	947 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant