FDB8878

new-10%

Manufacturer part number:FDB8878

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 48A D2PAK

Case Package:SOT-23

Datasheet:FDB8878 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	TO-263
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	47.3W Tc
Element Configuration	Single
Power Dissipation	47.3W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	14mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1235pF @ 15V
Current - Continuous Drain (Id) @ 25°C	48A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	244ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	35.3 ns
Turn-Off Delay Time	14.8 ns
Continuous Drain Current (ID)	48A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	1.235nF
Drain to Source Resistance	14mOhm
Rds On Max	14 mΩ
RoHS Status	RoHS Compliant