FDC6392S

new-10%

Manufacturer part number:FDC6392S

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 2.2A SSOT-6

Case Package:SOT-23

Datasheet:FDC6392S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-2.2A
Number of Elements	1
Power Dissipation-Max	960mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	960mW
Turn On Delay Time	8 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	369pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.2A Ta
Gate Charge (Qg) (Max) @ Vgs	5.2nC @ 4.5V
Rise Time	11ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	2.2A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
FET Feature	Schottky Diode (Isolated)
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free