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NTHD5904NT3

NTHD5904NT3

NTHD5904NT3

ON Semiconductor

MOSFET N-CH 20V 2.5A CHIPFET

SOT-23

NTHD5904NT3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Form C BEND
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 3.3A
[email protected] Reflow Temperature-Max (s) 30
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Power Dissipation-Max 640mW Ta
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.13W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 465pF @ 16V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Rise Time 17ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.065Ohm
Drain to Source Breakdown Voltage 20V
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

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