Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FDC655BN

FDC655BN

FDC655BN

ON Semiconductor

FDC655BN datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDC655BN Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 25MOhm
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 6.3A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 6.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.3A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 6.3A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.9 V
Feedback Cap-Max (Crss) 90 pF
Height 1.1mm
Length 3mm
Width 1.7mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.16675 $0.50025
6,000 $0.15599 $0.93594
15,000 $0.14523 $2.17845
30,000 $0.13770 $4.131
FDC655BN Product Details

FDC655BN Description


FDC655BN is a type of N-Channel logic-level MOSFET provided by ON Semiconductor based on the advanced PowerTrench? process. It is able to minimize the on-state resistance while maintaining superior switching performance. Due to its specific characteristics and reliable performance, it is ideally suitable for low-voltage and battery-powered applications requiring low in-line power loss and fast switching.



FDC655BN Features


  • Low gate charge

  • Low RDS (on)

  • Low on-state resistance

  • Superior switching performance

  • Available in the SuperSOT-6 package



FDC655BN Applications


  • low-voltage and battery-powered applications

  • Uninterruptible power supplies

  • Synchronous rectification


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News