FDC655BN datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDC655BN Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
25MOhm
Additional Feature
ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
6.3A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.6W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
6 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
25m Ω @ 6.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
570pF @ 15V
Current - Continuous Drain (Id) @ 25°C
6.3A Ta
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Rise Time
4ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
6.3A
Threshold Voltage
1.9V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
1.9 V
Feedback Cap-Max (Crss)
90 pF
Height
1.1mm
Length
3mm
Width
1.7mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FDC655BN Product Details
FDC655BN Description
FDC655BN is a type of N-Channel logic-level MOSFET provided by ON Semiconductor based on the advanced PowerTrench? process. It is able to minimize the on-state resistance while maintaining superior switching performance. Due to its specific characteristics and reliable performance, it is ideally suitable for low-voltage and battery-powered applications requiring low in-line power loss and fast switching.