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FDC655BN_NBNN007

  • FDC655BN_NBNN007
  • FDC655BN_NBNN007

FDC655BN_NBNN007

FDC655BN_NBNN007

ON Semiconductor

MOSFET N-CH 30V 6.3A SUPERSOT6

SOT-23

FDC655BN_NBNN007 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 800mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 6.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.3A
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V

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