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FDD2612

FDD2612

FDD2612

ON Semiconductor

MOSFET N-CH 200V 4.9A D-PAK

SOT-23

FDD2612 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2001
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 42W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 720mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 234pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.9A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:9133 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.668000$4.668
10$4.403774$44.03774
100$4.154503$415.4503
500$3.919343$1959.6715
1000$3.697493$3697.493

About FDD2612

The FDD2612 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 200V 4.9A D-PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDD2612, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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