FDD2612

new-10%

Manufacturer part number:FDD2612

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 200V 4.9A D-PAK

Case Package:SOT-23

Datasheet:FDD2612 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	42W Ta
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	720mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	234pF @ 100V
Current - Continuous Drain (Id) @ 25°C	4.9A Ta
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V