FDN302P Description

The FDN302P is a -20V P-channel 2.5V Specified PowerTrench? MOSFET that has been specially designed to reduce on-state resistance while maintaining low gate charge for superior switching performance. The most recent medium voltage power MOSFETs are optimized power switches that combine a tiny gate charge (QG), a small reverse recovery charge (Qrr), and a soft reverse recovery body diode, resulting in quick switching for synchronous rectification in AC/DC power supply. It makes use of a shielded-gate construction to provide charge balance. Using this sophisticated technology, the FOM (figure of merit (QGxRDS(ON)) of these devices is 66% lower than the previous version. Because it may avoid undesired voltage spikes in synchronous rectification, the soft body diode performance of the new PowerTrench? MOSFET can eliminate snubber circuits or replace higher voltage rating - MOSFET require circuits. This product is intended for general use and can be used in a variety of applications.
FDN302P Features

–20 A, –2.4 V.
RDS(ON)= 0.055Ω @ VGS = –4.5 V
RDS(ON) = 0.080Ω @ VGS = –2.5 V
SuperSOT? -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the samefootprint
Fast switching speed
High performance trench technology for extremely low RDS(ON)
FDN302P Applications

Power Management
Load Switch
Battery Protection
Mobile phones
PC & notebooks
Portable electronics