FDD45AN06LA0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDD45AN06LA0 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
55W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
36mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
880pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5.2A Ta 25A Tc
Gate Charge (Qg) (Max) @ Vgs
11nC @ 5V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
FDD45AN06LA0 Product Details
FDD45AN06LA0 Description
The FDD45AN06LA0is a N-Channel PowerTrench?which is produced using ON Semiconductor’s advanced POWERTRENCH? process that has been especiallytailored to minimize the on?state resistance and yet maintain superiorswitching performance.
FDD45AN06LA0 Features
? rDS(ON) = 39m? (Typ.), VGS = 5V, ID = 22A
? Qg(tot) = 8.3nC (Typ.), VGS = 5V
? Low Miller Charge
? Low QRR Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)