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FDD45AN06LA0

FDD45AN06LA0

FDD45AN06LA0

ON Semiconductor

FDD45AN06LA0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDD45AN06LA0 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252AA
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 55W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 36mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.2A Ta 25A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
FDD45AN06LA0 Product Details

FDD45AN06LA0  Description

 

The FDD45AN06LA0 is a N-Channel PowerTrench? which  is produced using ON Semiconductor’s advanced POWERTRENCH? process that has been especially tailored to minimize the on?state resistance and yet maintain superior switching performance.

 

FDD45AN06LA0    Features


? rDS(ON) = 39m? (Typ.), VGS = 5V, ID = 22A

? Qg(tot) = 8.3nC (Typ.), VGS = 5V

? Low Miller Charge

? Low QRR Body Diode

? UIS Capability (Single Pulse and Repetitive Pulse)

? Qualified to AEC Q101

Formerly developmental type 83535

 

FDD45AN06LA0   Applications


? Motor / Body Load Control

? ABS Systems

? Powertrain Management

? Injection Systems

? DC-DC converters and Off-line UPS

? Distributed Power Architectures and VRMs

? Primary Switch for 12V and 24V systems


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