SIB414DK-T1-GE3

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Manufacturer part number:SIB414DK-T1-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 8V 7.9A 6-Pin PowerPAK SC-75 T/R

Case Package:SOT-23

Datasheet:SIB414DK-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	26mOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
JESD-30 Code	S-XDSO-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.4W Ta 13W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.4W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	26m Ω @ 7.9A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	732pF @ 4V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	14.03nC @ 5V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	5V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	8V
Pulsed Drain Current-Max (IDM)	20A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free