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BSS119 E6433

BSS119 E6433

BSS119 E6433

Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

SOT-23

BSS119 E6433 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series SIPMOS®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 360mW Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 78pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V

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