FDD6796A

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Manufacturer part number:FDD6796A

Manufacturer:ON Semiconductor

Description:FDD6796A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDD6796A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.7W Ta 42W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.7W
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1780pF @ 13V
Current - Continuous Drain (Id) @ 25°C	20A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	67A
Drain-source On Resistance-Max	0.0057Ohm
Drain to Source Breakdown Voltage	25V
Avalanche Energy Rating (Eas)	40 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant