STB27NM60ND

new-10%

Manufacturer part number:STB27NM60ND

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 600V 21A D2PAK

Case Package:SOT-23

Datasheet:STB27NM60ND Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, FDmesh™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STB27N
Number of Elements	1
Configuration	Single
Power Dissipation-Max	160W Tc
Power Dissipation	160W
Turn On Delay Time	60 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	160m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2400pF @ 50V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Rise Time	30ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	25V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free