FDD6N50TF

new-10%

Manufacturer part number:FDD6N50TF

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 500V 6A DPAK

Case Package:SOT-23

Datasheet:FDD6N50TF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	UniFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	24A
Base Part Number	FDD6N50
Power Dissipation-Max	89W Tc
Element Configuration	Single
Power Dissipation	89W
Turn On Delay Time	6 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	900m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	940pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	16.6nC @ 10V
Rise Time	55ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free