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PMGD290UCEAX

PMGD290UCEAX

PMGD290UCEAX

Nexperia USA Inc.

PMGD290UCEAX datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Nexperia USA Inc. stock available on our website

SOT-23

PMGD290UCEAX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 280mW
Pin Count 6
Number of Channels 2
Element Configuration Dual
Turn On Delay Time 18 ns
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 380m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 83pF @ 10V
Current - Continuous Drain (Id) @ 25°C 725mA 500mA
Gate Charge (Qg) (Max) @ Vgs 0.68nC @ 4.5V
Rise Time 30ns
Fall Time (Typ) 72 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 500mA
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.11798 $0.35394
6,000 $0.11083 $0.66498
15,000 $0.10368 $1.5552
30,000 $0.09510 $2.853
75,000 $0.09152 $6.864
PMGD290UCEAX Product Details

PMGD290UCEAX Description


The PMGD290UCEAX is a 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET. N/P-channel complementary enhancement mode Trench MOSFET technology is used to create a Field-Effect Transistor (FET) in the tiny SOT363 Surface-Mounted Device (SMD) plastic box.



PMGD290UCEAX Features


  • Very fast switching

  • Trench MOSFET technology

  • 2 kV ESD protection

  • AEC-Q101 qualified



PMGD290UCEAX Applications


  • Low-side loadswitch

  • Switching circuits

  • Automotive applications

  • Relay driver

  • High-speed line driver


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