FDD850N10LD

new-10%

Manufacturer part number:FDD850N10LD

Manufacturer:ON Semiconductor

Description:MOSF N CH 100V 15.7A DPAK

Case Package:SOT-23

Datasheet:FDD850N10LD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-5, DPak (4 Leads + Tab), TO-252AD
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G4
Number of Elements	1
Power Dissipation-Max	42W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1465pF @ 25V
Current - Continuous Drain (Id) @ 25°C	15.3A Tc
Gate Charge (Qg) (Max) @ Vgs	28.9nC @ 10V
Rise Time	21ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	15.3A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.096Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	46A
Avalanche Energy Rating (Eas)	41 mJ
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	RoHS Compliant