SI4888DY-T1-E3

new-10%

Manufacturer part number:SI4888DY-T1-E3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R

Case Package:SOT-23

Datasheet:SI4888DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	7mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Power Dissipation	1.6W
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	1.6V @ 250μA
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	24nC @ 5V
Rise Time	10ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	44 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	7mOhm
Rds On Max	7 mΩ
Nominal Vgs	800 mV
Height	1.5494mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free