FDFMA2P859T

new-10%

Manufacturer part number:FDFMA2P859T

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 3A MICROFET

Case Package:SOT-23

Datasheet:FDFMA2P859T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Number of Pins	6
Weight	40mg
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Series	PowerTrench®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	1.4W Ta
Element Configuration	Single
Power Dissipation	1.4W
Turn On Delay Time	9 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	120m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	435pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	6nC @ 4.5V
Rise Time	11ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	-3A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
FET Feature	Schottky Diode (Isolated)
Radiation Hardening	No
RoHS Status	RoHS Compliant