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FDI2532

FDI2532

FDI2532

ON Semiconductor

MOSFET 150V N-Ch UltraFET Trench

SOT-23

FDI2532 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 310W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.479381 $0.479381
10 $0.452246 $4.52246
100 $0.426648 $42.6648
500 $0.402498 $201.249
1000 $0.379714 $379.714

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