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SI1067X-T1-GE3

SI1067X-T1-GE3

SI1067X-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 1.06A SC89-6

SOT-23

SI1067X-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 150mOhm
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Power Dissipation-Max 236mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 236mW
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 1.06A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 375pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 5V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 1.06A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Nominal Vgs -950 mV
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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