FDI3632

new-10%

Manufacturer part number:FDI3632

Manufacturer:ON Semiconductor

Description:MOSFET 100V 80a 0.009 Ohms/VGS=10V

Case Package:SOT-23

Datasheet:FDI3632 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package	I2PAK (TO-262)
Weight	2.084g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	80A
Number of Elements	1
Power Dissipation-Max	310W Tc
Element Configuration	Single
Power Dissipation	310W
Turn On Delay Time	30 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	39ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	46 ns
Turn-Off Delay Time	96 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	6nF
Drain to Source Resistance	7.5mOhm
Rds On Max	9 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free