FDM606P

new-10%

Manufacturer part number:FDM606P

Manufacturer:ON Semiconductor

Description:Trans MOSFET P-CH 20V 6.8A 8-Pin MicroFET T/R

Case Package:SOT-23

Datasheet:FDM606P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead Exposed Pad
Supplier Device Package	8-MLP, MicroFET (3x2)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1996
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.92W Ta
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	30mOhm @ 6.8A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6.8A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V