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FDM6296

  • FDM6296
  • FDM6296

FDM6296

FDM6296

ON Semiconductor

FDM6296 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDM6296 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 2.1W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10.5m Ω @ 11.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2005pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11.5A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.896192 $7.896192
10 $7.449238 $74.49238
100 $7.027583 $702.7583
500 $6.629796 $3314.898
1000 $6.254524 $6254.524
FDM6296 Product Details

FDM6296 Description


The thermally efficient MicroFET package that houses this single N-channel MOSFET was created especially with Point of Load converter performance in mind. This device works well as a "low side" synchronous rectifier or "high side" control switch because it optimizes the balance between rDS(on) and gate charge.



FDM6296 Features


  • Max rDS(on) = 10.5m|? at VGS = 10V, ID = 11.5A

  • Max rDS(on) = 15m|? at VGS = 4.5V, ID = 10A

  • Low Qg, Qgd and Rg for efficient switching performance

  • RoHS Compliant



FDM6296 Applications


  • Point of Load Converter

  • 1/16 Brick Synchronous Rectifier


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