SI6913DQ-T1-GE3

new-10%

Manufacturer part number:SI6913DQ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 12V 5.8A 1.14W 21mohm @ 4.5V

Case Package:SOT-23

Datasheet:SI6913DQ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Number of Pins	8
Weight	157.991892mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	21mOhm
Subcategory	Other Transistors
Max Power Dissipation	830mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI6913
Pin Count	8
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	830mW
Turn On Delay Time	45 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	21m Ω @ 5.8A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 400μA
Current - Continuous Drain (Id) @ 25°C	4.9A
Gate Charge (Qg) (Max) @ Vgs	28nC @ 4.5V
Rise Time	80ns
Drain to Source Voltage (Vdss)	12V
Fall Time (Typ)	80 ns
Turn-Off Delay Time	130 ns
Continuous Drain Current (ID)	-4.4A
Threshold Voltage	-900mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	4.9A
Drain to Source Breakdown Voltage	-12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1mm
Length	3mm
Width	4.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free