FDMA3027PZ Description

This particular device is intended to serve as a gate driver for larger Mosfets and other dual switching applications in a single package. For the least amount of conduction losses, it has two separate P-Channel MOSFETs with low on-state resistance. The MicroFET 2x2 package is ideal for linear mode applications and has remarkable thermal performance given its size. To increase the ESD voltage level, a G-S zener has been installed.

FDMA3027PZ Features

• Maximum rDS(on) is 87 m at -10 V, -3.3 A.

• Maximum rDS(on) is 152 m at -4.5 V, -2.3 A.

• Typical HBM ESD protection level > 2 KV (Note 3)

• Low profile in the new packaging, 0.8 mm at most

• NanoFET 2x2 mm

• Conforms to RoHS

FDMA3027PZ Applications

• The load switch

• Discreet Gate Operator