FDMB3800N      Description

   This 30V, 6.6m Ω, 3.37mx1.47mLGA Dual NexFET power MOSFET is designed to minimize resistance and gate charge in a small area. Its small size and common drain configuration make the device ideal for multi-battery applications and small handheld devices.These N-channel logic level MOSFET are manufactured using an advanced PowerTrress process that is customized to minimize on-resistance while maintaining excellent switching performance.These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.

FDMB3800N      Features

Max rDS(on) = 40mΩ at VGS = 10V, ID = 4.8A

Max rDS(on) = 51mΩ at VGS = 4.5V, ID = 4.3A

Fast switching speed

Low gate Charge

High performance trench technology for extremely low rDS(on)

High power and current handling capability.

RoHS Compliant

FDMB3800N             Applications

This product is general usage and suitable for many different applications.