FDMC15N06

new-10%

Manufacturer part number:FDMC15N06

Manufacturer:ON Semiconductor

Description:MOSFET UltraFET 55V, 15A

Case Package:SOT-23

Datasheet:FDMC15N06 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	200mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Power Dissipation-Max	2.3W Ta 35W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	35W
Case Connection	DRAIN
Turn On Delay Time	9.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	900m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.4A Ta 15A Tc
Gate Charge (Qg) (Max) @ Vgs	11.5nC @ 10V
Rise Time	36.5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	22.5 ns
Continuous Drain Current (ID)	15A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	2.4A
Drain-source On Resistance-Max	0.09Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	36 mJ
Height	500μm
Length	3.3mm
Width	3.3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant