FDMC510P

new-10%

Manufacturer part number:FDMC510P

Manufacturer:ON Semiconductor

Description:FDMC510P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMC510P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	165.33333mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Power Dissipation-Max	2.3W Ta 41W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	41W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 12A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7860pF @ 10V
Current - Continuous Drain (Id) @ 25°C	12A Ta 18A Tc
Gate Charge (Qg) (Max) @ Vgs	116nC @ 4.5V
Rise Time	34ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	170 ns
Turn-Off Delay Time	338 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	-500mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	54A
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	50A
Avalanche Energy Rating (Eas)	37 mJ
Height	750μm
Length	3.3mm
Width	3.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant