FDMC5614P

new-10%

FDMC5614P

Manufacturer part number:FDMC5614P

Manufacturer:ON Semiconductor

Description:FDMC5614P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMC5614P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	200mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	100MOhm
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	Other Transistors
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	-5.7A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Power Dissipation-Max	2.1W Ta 42W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 5.7A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1055pF @ 30V
Current - Continuous Drain (Id) @ 25°C	5.7A Ta 13.5A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	-5.7A
Threshold Voltage	-1.95V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	23A
Height	725μm
Length	3.3mm
Width	3.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free