FDMC5614P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDMC5614P Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
200mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
100MOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-5.7A
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
S-PDSO-F5
Number of Elements
1
Power Dissipation-Max
2.1W Ta 42W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.1W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 5.7A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1055pF @ 30V
Current - Continuous Drain (Id) @ 25°C
5.7A Ta 13.5A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
11ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
-5.7A
Threshold Voltage
-1.95V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-60V
Pulsed Drain Current-Max (IDM)
23A
Height
725μm
Length
3.3mm
Width
3.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:8188 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FDMC5614P Product Details
FDMC5614P Description
FDMC5614P is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. The rugged gate variant of ON Semiconductor's superior PowerTrench? technology is used in this P-Channel MOSFET. It was designed with a wide range of gate drive voltage ratings in mind for power management applications (4.5V-20V).
FDMC5614P Features
Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A
Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A
Low gate charge
Fast switching speed
High performance trench technology for extremely low rDS(on)
High power and current handling capability
RoHS Compliant
FDMC5614P Applications
Power management
Load switch
Battery protection
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