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FDMC6683PZ

FDMC6683PZ

FDMC6683PZ

ON Semiconductor

IC POWER MANAGEMENT

SOT-23

FDMC6683PZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Surface Mount YES
Supplier Device Package 8-MLP (3.3x3.3)
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
JESD-30 Code S-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 26W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7995pF @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
JEDEC-95 Code MO-240BA
Drain Current-Max (Abs) (ID) 14A
Drain-source On Resistance-Max 0.0084Ohm
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 20V
Avalanche Energy Rating (Eas) 38 mJ
RoHS Status Non-RoHS Compliant

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