FDMC7572S

new-10%

Manufacturer part number:FDMC7572S

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 25V 40A POWER33

Case Package:SOT-23

Datasheet:FDMC7572S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	32.13mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®, SyncFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Power Dissipation-Max	2.3W Ta 52W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	52W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.15m Ω @ 22.5A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2705pF @ 13V
Current - Continuous Drain (Id) @ 25°C	22.5A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Rise Time	3.6ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	40A
Threshold Voltage	1.7V
JEDEC-95 Code	MO-240BA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	22.5A
Drain to Source Breakdown Voltage	25V
Nominal Vgs	1.7 V
Height	1mm
Length	3.4mm
Width	3.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free