BSC110N06NS3GATMA1

new-10%

Manufacturer part number:BSC110N06NS3GATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R

Case Package:SOT-23

Datasheet:BSC110N06NS3GATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 50W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 23μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 30V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Rise Time	77ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	12V
Max Dual Supply Voltage	60V
Pulsed Drain Current-Max (IDM)	200A
Avalanche Energy Rating (Eas)	22 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead