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FDMC86102LZ

  • FDMC86102LZ
  • FDMC86102LZ

FDMC86102LZ

FDMC86102LZ

ON Semiconductor

FDMC86102LZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMC86102LZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 14 hours ago)
Contact Plating Gold, Silver
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 165.33333mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 24MOhm
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 41W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 41W
Case Connection DRAIN
Turn On Delay Time 7.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1290pF @ 50V
Current - Continuous Drain (Id) @ 25°C 7A Ta 18A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 2.3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.5 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 30A
Nominal Vgs 1.6 V
Height 750μm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
FDMC86102LZ Product Details

FDMC86102LZ Description


This N-Channel logic Level MOSFET is made with the sophisticated PowerTrench? process, which includes Shielded Gate technology. The on-state resistance of this technique has been improved while maintaining exceptional switching performance. To improve the ESD voltage level, a G-S zener has been installed.



FDMC86102LZ Features


  • Shielded Gate MOSFET Technology

  • Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A

  • Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A

  • HBM ESD protection level > 6 KV typical (Note 4)

  • 100% UIL Tested

  • RoHS Compliant



FDMC86102LZ Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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