FDMC86106LZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDMC86106LZ Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Supplier Device Package
8-MLP (3.3x3.3)
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2013
Series
PowerTrench®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
2.3W Ta 19W Tc
Power Dissipation
19W
Turn On Delay Time
4.5 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
103mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
310pF @ 50V
Current - Continuous Drain (Id) @ 25°C
3.3A Ta 7.5A Tc
Gate Charge (Qg) (Max) @ Vgs
6nC @ 10V
Rise Time
1.3ns
Drain to Source Voltage (Vdss)
100V
Fall Time (Typ)
1.4 ns
Turn-Off Delay Time
10 ns
Continuous Drain Current (ID)
7.5A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Input Capacitance
310pF
Drain to Source Resistance
103mOhm
Rds On Max
103 mΩ
Height
750μm
Length
3.3mm
Width
3.3mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
FDMC86106LZ Product Details
FDMC86106LZ Description
Fairchild Semiconductor's sophisticated PowerTrench? process, which includes Shielded Gate technology, is used to make these N-Channel logic Level MOSFETs. The on-state resistance of this technique has been improved while maintaining exceptional switching performance. To improve the ESD voltage level, a G-S zener has been installed.