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TK4P55D(T6RSS-Q)

TK4P55D(T6RSS-Q)

TK4P55D(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 550V 4A DPAK-3

SOT-23

TK4P55D(T6RSS-Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 80W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.88Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 550V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 490pF
Rds On Max 1.88 Ω
Radiation Hardening No
RoHS Status RoHS Compliant

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