Name: FDME410NZT
Brand: ON Semiconductor
SKU: FDME410NZT
Availability: InStock

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FDME410NZT

Manufacturer part number:FDME410NZT

Manufacturer:ON Semiconductor

Description:FDME410NZT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDME410NZT Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Lifecycle Status	CONSULT SALES OFFICE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-PowerUFDFN
Number of Pins	6
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	ESD PROTECTION
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N3
Number of Elements	1
Power Dissipation-Max	2.1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.4W
Case Connection	DRAIN
Turn On Delay Time	7.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	26m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1025pF @ 10V
Current - Continuous Drain (Id) @ 25°C	7A Ta
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Rise Time	3.4ns
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	3.2 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	7A
Threshold Voltage	700mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	7A
Drain to Source Breakdown Voltage	20V
Nominal Vgs	700 mV
Height	500μm
Length	1.6mm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

FDME410NZT Product Details

FDME410NZT Description

The FDME410NZT is a single N-channel MOSFET designed using Fairchild Semiconductor's advanced PowerTrench? process to optimize the RDS (ON) @ VGS = 1.5V on a special MicroFET lead frame. The onsemi FDME410NZT is suitable for Li-ion battery pack, baseband switch, and load switch applications. The operating junction and storage temperature are between -55 and 150℃. The MOSFET FDME410NZT is in the UMLP-6 package with 1.4W power dissipation.