FDME430NT

new-10%

Manufacturer part number:FDME430NT

Manufacturer:ON Semiconductor

Description:MOSFET 30V N-Channel PowerTrench MOSFET

Case Package:SOT-23

Datasheet:FDME430NT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-PowerUFDFN
Number of Pins	6
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N3
Number of Elements	1
Power Dissipation-Max	2.1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	760pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6A Ta
Gate Charge (Qg) (Max) @ Vgs	9nC @ 4.5V
Rise Time	3ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	3.3 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.04Ohm
Drain to Source Breakdown Voltage	30V
Feedback Cap-Max (Crss)	75 pF
Height	500μm
Length	1.6mm
Width	1.6mm
Radiation Hardening	No
RoHS Status	RoHS Compliant