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FDMS3600S

FDMS3600S

FDMS3600S

ON Semiconductor

FDMS3600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMS3600S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Number of Pins 8
Weight 171mg
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 1W
Terminal Position QUAD
JESD-30 Code R-PQFP-N7
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN SOURCE
Transistor Application SWITCHING
Rise Time 5.3ns
Drain to Source Voltage (Vdss) 25V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 3.9 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 15A
Drain to Source Breakdown Voltage 25V
Input Capacitance 1.68nF
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 1.6mOhm
Rds On Max 5.6 mΩ
Nominal Vgs 1.8 V
Feedback Cap-Max (Crss) 90 pF
Height 1.05mm
Length 5mm
Width 6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $1.15830 $3.4749
6,000 $1.11540 $6.6924
FDMS3600S Product Details

FDMS3600S Description


In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.



FDMS3600S Features


  • Maximum RDS(on) at VGS = 10 V, ID = 30 A is 1.6 m.

  • At VGS = 4.5 V, ID = 25 A, the maximum RDS(on) is 2.4 m.

  • Reduced rise/fall periods due to reduced inductance packing reduce switching losses.

  • Optimal designing for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.

  • Conforms to RoHS



FDMS3600S Applications


Notebook PC


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