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FDZ1416NZ

FDZ1416NZ

FDZ1416NZ

ON Semiconductor

FDZ1416NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDZ1416NZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA, WLCSP
Number of Pins 4
Weight 22.24mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Max Power Dissipation 1.7W
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
Turn On Delay Time 9.5 ns
Power - Max 500mW
FET Type 2 N-Channel (Dual) Common Drain
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 24V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 7A
Input Capacitance 1.14nF
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Drain to Source Resistance 23mOhm
Height 150μm
Length 1.6mm
Width 1.4mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.28675 $1.43375
10,000 $0.27613 $2.7613
25,000 $0.27034 $6.7585
FDZ1416NZ Product Details

FDZ1416NZ      Description

 

The device is a single package solution designed specifically for lithium-ion battery pack protection circuits and other ultra-portable applications. It features two common-drain N-channel MOSFET for bi-directional current flow, state-of-the-art PowerTritch process and state-of-the-art "low-pitch" WLCSP packaging process, minimizing PCB space and rS1S2 (conduction). This advanced WLCSP MOSFET represents a breakthrough in packaging technology, enabling the device to combine excellent heat transfer characteristics, ultra-thin packaging, low gate charge and low rS1S2 (conduction).

 


FDZ1416NZ      Features

 

Max rS1S2(on) = 23 mΩ at VGS = 4.5 V, IS1S2 = 1 A

Max rS1S2(on) = 25 mΩ at VGS = 4 V, IS1S2 = 1 A

Max rS1S2(on) = 28 mΩ at VGS = 3.1 V, IS1S2 = 1 A

Max rS1S2(on) = 33 mΩ at VGS = 2.5 V, IS1S2 = 1 A

Occupies only 2.2 mm2 of PCB area

Ultra-thin package: less than 0.35 mm height when mounted to PCB

High power and current handling capability

HBM ESD protection level > 3.2 kV (Note 3)

RoHS Compliant


FDZ1416NZ      Applications


Mobile Handsets

Battery Management

Load Switch

Battery Protection

 

  





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