FDMS3620S      Description

  The device includes two dedicated N-channel MOSFET in a dual PQFN package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous SyncFET (Q2) are designed to provide optimal power efficiency.

FDMS3620S      Features

Q1: N-Channel

Max rDS(on) = 4.7 mΩ at VGS = 10 V, ID = 17.5 A

Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16 A

Q2: N-Channel

Max rDS(on) = 1.0 mΩ at VGS = 10 V, ID = 38 A

Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 35 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

RoHS Compliant

FDMS3620S       Applications

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