FDMS3624S      Description

   The device includes two dedicated N-channel MOSFET in a dual PQFN package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous SyncFET (Q2) are designed to provide optimal power efficiency.

FDMS3624S      Features

Q1: N-Channel

Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 Al

Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 Al

Q2: N-Channel

Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 Al

Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 Al

Low inductance packaging shortens rise/fall times, resulting in lower switching lossesl

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringingl

RoHS Compliantl

FDMS3624S           Applications

Distribution

Notebook PC