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IRF7306TR

IRF7306TR

IRF7306TR

Infineon Technologies

MOSFET 2P-CH 30V 3.6A 8-SOIC

SOT-23

IRF7306TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -30V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -3.6A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 100m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 3.6A
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.1Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.81480 $3.2592

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